G.W. Taylor - Concepedia

Author

G.W. Taylor

Also Known As

G W Taylor, G. R. Taylor, G. Taylor, G. W. Taylor, G.W Taylor, G.W. Taylor, Geoff Taylor, Geoff W. Taylor, Taylor, G. W., Taylor,G. W.

232

Publications

4.1K

Citations

H-Index

115

Concepts

All Affiliations

AT&T (United States)University of Toronto Texas Instruments (United States)Nokia (United States)University of Bradford

About

G.W. Taylor is an author at AT&T (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	70	3.4K
2	Applied Physics	23	60	3.1K
3	Natural Sciences	2	2	562
4	Education	1	1	15
5	Medicine	1	1	13

G.W. Taylor

Publications

3.6K

Citations

H-Index

Page 1

	Year	Citations
Microwave magnetic properties of Co50/(SiO2)50 nanoparticles Mingzhong Wu, Y. D. Zhang, S. Hui, Applied Physics Letters NanoparticlesMagnetic PropertiesMicrowave Magnetic PropertiesEngineeringNanoporous Material	2002	470
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps J.G. Simmons, G.W. Taylor Physical review. B, Solid state EngineeringSingle Trapping LevelCharge TransportElectron PhysicSemiconductors	1971	458
High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping Levels J.G. Simmons, G.W. Taylor Physical review. B, Solid state Optical PumpingPhotonicsElectrical EngineeringOptical MaterialsEngineering	1972	233
Effects of hot-carrier trapping in n- and p-channel MOSFET's K.K. Ng, G.W. Taylor IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHot-carrier TrappingPhysicsNanoelectronics	1983	172
Thermally Stimulated Currents in Semiconductors and Insulators Having Arbitrary Trap Distributions J.G. Simmons, G.W. Taylor, Man Chun Tam Physical review. B, Solid state SemiconductorsTrap DistributionElectrical EngineeringDefect SemiconductorsEngineering	1973	160
Subthreshold conduction in MOSFET's G.W. Taylor IEEE Transactions on Electron Devices Device ModelingSubthreshold ConductionElectrical EngineeringSemiconductor DeviceEngineering	1978	151
A new double-heterostructure optoelectronic switching device using molecular-beam epitaxy G.W. Taylor, J.G. Simmons, A. Y. Cho, Journal of Applied Physics	1986	130
Basic equations for statistics, recombination processes, and photoconductivity in amorphous insulators and semiconductors G.W. Taylor, J.G. Simmons Journal of Non-Crystalline Solids SemiconductorsEngineeringPhysicsApplied PhysicsAmorphous Insulators	1972	125
Theory of photoconductivity in amorphous semiconductors containing relatively narrow trap bands J.G. Simmons, G.W. Taylor Journal of Physics C Solid State Physics EngineeringAmorphous SemiconductorsElectron PhysicSemiconductorsCharge Carrier Transport	1974	92
A device model for an ion-implanted MESFET G.W. Taylor, H. M. Darley, R.C. Frye, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringIon ImplantationEngineeringGaussian Profile	1979	91

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