J.G. Simmons - Concepedia

Author

J.G. Simmons

University of Toronto

Also Known As

J G Simmons, J. G. Simmons, J. Simmons, J.G Simmons, J.G. Simmons, JG Simmons

Publications

Citations

H-Index

Concepts

All Affiliations

University of Toronto Institute for Microstructural Sciences University of Bradford McMaster University AT&T (United States)

About

J.G. Simmons is an author at University of Toronto specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	43	2.3K
2	Applied Physics	23	42	2.3K
3	Natural Sciences	2	2	348
4	Chemical Engineering	1	1	21
5	Chemistry	1	1	49

J.G. Simmons

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
New conduction and reversible memory phenomena in thin insulating films J.G. Simmons, R.R. Verderber Proceedings of the Royal Society of London A Mathematical and Physical Sciences	1967	546
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps J.G. Simmons, G.W. Taylor Physical review. B, Solid state EngineeringSingle Trapping LevelCharge TransportElectron PhysicSemiconductors	1971	458
Richardson-Schottky Effect in Solids J.G. Simmons Physical Review Letters EngineeringNuclear PhysicsPhysicsNatural SciencesApplied Physics	1965	256
Thermally Stimulated Currents in Semiconductors and Insulators Having Arbitrary Trap Distributions J.G. Simmons, G.W. Taylor, Man Chun Tam Physical review. B, Solid state SemiconductorsTrap DistributionElectrical EngineeringDefect SemiconductorsEngineering	1973	160
Basic equations for statistics, recombination processes, and photoconductivity in amorphous insulators and semiconductors G.W. Taylor, J.G. Simmons Journal of Non-Crystalline Solids SemiconductorsEngineeringPhysicsApplied PhysicsAmorphous Insulators	1972	125
Theory of photoconductivity in amorphous semiconductors containing relatively narrow trap bands J.G. Simmons, G.W. Taylor Journal of Physics C Solid State Physics EngineeringAmorphous SemiconductorsElectron PhysicSemiconductorsCharge Carrier Transport	1974	92
Theory of transient emission current in MOS devices and the direct determination interface trap parameters J.G. Simmons, Linfeng Wei Solid-State Electronics Device ModelingElectrical EngineeringMos DevicesEngineeringNanoelectronics	1974	86
Multicolor voltage-tunable quantum-well infrared photodetector H.C. Liu, J. Li, J. R. Thompson, IEEE Electron Device Letters Quantum PhotonicsEngineeringOptoelectronic DevicesExternal VoltagePhotoelectric Sensor	1993	79
The bipolar inversion channel field-effect transistor (BICFET)&#8212;A new field-effect solid-state device: Theory and structures G.W. Taylor, J.G. Simmons IEEE Transactions on Electron Devices	1985	74
Theory of metallic contacts on high resistivity solids—I. Shallow traps J.G. Simmons Journal of Physics and Chemistry of Solids Materials ScienceEngineeringResistorSpecific ResistanceSurface Science	1971	69

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