Kin P. Cheung

Publications

2.7K

Citations

H-Index

1991

Active since

Affiliations

National Institute of Standards and Technology(Current)

Rutgers, The State University of New Jersey

Theiss Research

Taiwan Semiconductor Manufacturing Company (Taiwan)

AT&T (United States)

Kin P. Cheung is an author at National Institute of Standards and Technology specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

EngineeringElectrical EngineeringMicroelectronicsApplied PhysicsPhysicsNanoelectronicsElectrical InsulationCondensed Matter PhysicsMaterial ScienceComputer Engineering

Publications per year

1991–2020

Publications

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Liangchun Yu, Greg Dunne, Kevin Matocha et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 214 citations

Engineering, Silicon Oxide, Power Electronics +18

Plasma-charging damage: A physical model

Kin P. Cheung · Journal of Applied Physics · 1994 · 144 citations

Electrical Engineering, Plasma Uniformity, Space Plasma Physics +15

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

Moshe Gurfinkel, Hao Xiong, Kin P. Cheung et al. · IEEE Transactions on Electron Devices · 2008 · 124 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide

Mengwei Si, Xiao Lyu, Pragya R. Shrestha et al. · Applied Physics Letters · 2019 · 121 citations · Full text

Magnetism, Electrical Engineering, Spintronics +14

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Sarit Dhar, Sarah K. Haney, Lin Cheng et al. · Journal of Applied Physics · 2010 · 118 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

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