Concepedia

Liangchun Yu

LY

Statistics

Publications

5

Citations

376

H-Index

5

Active since

2008

Affiliations

Rutgers, The State University of New Jersey(Current)

GE Global Research (United States)

National Institute of Standards and Technology

Liangchun Yu is an author at Rutgers, The State University of New Jersey specializing in electrical engineering, microelectronics, and engineering.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsPower ElectronicsReliabilityNanoelectronicsPower SemiconductorsExtreme Environment ElectronicsIntegrated Circuits

Publications per year

2008–2014

5

Publications

5

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Liangchun Yu, Greg Dunne, Kevin Matocha et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 214 citations

Engineering, Silicon Oxide, Power Electronics +18

Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices

Liangchun Yu, Kuang Sheng · IEEE Transactions on Electron Devices · 2008 · 58 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Oxide Reliability of SiC MOS Devices

Liangchun Yu, Kin P. Cheung, J. P. Campbell et al. · 2008 · 39 citations

Reliability, Electrical Engineering, Engineering +13

Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

Reza Ghandi, Cheng-Po Chen, Liang Yin et al. · IEEE Electron Device Letters · 2014 · 35 citations

Electrical Engineering, Engineering, Stable Operation +12

High-Frequency Switching of SiC High-Voltage LJFET

Kuang Sheng, Yongxi Zhang, Liangchun Yu et al. · IEEE Transactions on Power Electronics · 2009 · 30 citations

Electrical Engineering, Engineering, High-voltage Lateral Jfet +10

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