Concepedia
Statistics
Publications
22
Citations
1K
H-Index
17
Active since
2006
Affiliations
National Tsing Hua University(Current)
National Taiwan University
National Synchrotron Radiation Research Center
Intel (United States)
National Institutes of Applied Research
T. D. Lin is an author at National Tsing Hua University specializing in materials science, semiconductor materials, and engineering.
Publications per year
2006–2017
Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure
Mao Lin Huang, Yu‐Cheng Chang, Chia-Yuan Chang et al. · Applied Physics Letters · 2006 · 187 citations
Engineering, Electrical Engineering, Materials Science +17
High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
T. D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Applied Physics Letters · 2008 · 127 citations
Engineering, Electrical Engineering, Materials Science +12
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
Chia-Yuan Chang, Yen-Lung Chiou, Yu‐Cheng Chang et al. · Applied Physics Letters · 2006 · 123 citations
Engineering, Materials Engineering, Materials Science +17
Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
Y. C. Chang, Mao Lin Huang, K. Y. Lee et al. · Applied Physics Letters · 2008 · 112 citations
Natural Sciences, Materials Engineering, Materials Science +17
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs
Mao Lin Huang, Yen‐Chung Chang, Y. H. Chang et al. · Applied Physics Letters · 2009 · 72 citations
Natural Sciences, Materials Science, Physics +17
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