Applied Physics Letters · 2006 · 187 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsX-ray Photoelectron SpectroscopyBand GapBand OffsetsConduction BandDiode Current-voltage CharacteristicsEffective MassEnergy Band GapHeterostructuresValence Band
The valence-band offset has been determined to be 3.83±0.05eV at the atomic-layer-deposition Al2O3∕InGaAs interface by x-ray photoelectron spectroscopy. The Au–Al2O3∕InGaAs metal-oxide-semiconductor diode exhibits current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, a conduction-band offset of 1.6±0.1eV at the Al2O3–InGaAs interface and an electron effective mass ∼0.28±0.04m0 of the Al2O3 layer have been extracted. Consequently, combining the valence-band offset, the conduction-band offset, and the energy-band gap of the InGaAs, the energy-band gap of the atomic-layer-deposited Al2O3 is 6.65±0.11eV.
11
E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si
H.Y. Yu, Meng Li, B. J. Cho et al. · Applied Physics Letters · 2002 · 316 citations