Y. H. Chang

Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs

Mao Lin Huang, Yen‐Chung Chang, Y. H. Chang et al. · Applied Physics Letters · 2009 · 71 citations

Aluminium Nitride, Engineering, Chemistry +16

Realization of high-quality HfO2 on In0.53Ga0.47As by <i>in-situ</i> atomic-layer-deposition

T.D. Lin, Y. H. Chang, Chao‐An Lin et al. · Applied Physics Letters · 2012 · 50 citations

Oxide Heterostructures, Materials Science, Epitaxial Growth +13

Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via <i>in-situ</i> atomic layer deposition

Y. H. Chang, Chao‐An Lin, Y. T. Liu et al. · Applied Physics Letters · 2012 · 31 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Effective Passivation +18

Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

Chao‐An Lin, H. C. Chiu, T. H. Chiang et al. · Applied Physics Letters · 2011 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

Pei-Jer Tzeng, Y. H. Chang, Kuei‐Shu Chang‐Liao · IEEE Electron Device Letters · 2001 · 23 citations

Materials Science, High-dielectric Constant Material, Electrical Engineering +14