T.D. Lin

Realization of high-quality HfO2 on In0.53Ga0.47As by <i>in-situ</i> atomic-layer-deposition

T.D. Lin, Y. H. Chang, Chao‐An Lin et al. · Applied Physics Letters · 2012 · 50 citations

Oxide Heterostructures, Materials Science, Epitaxial Growth +13

Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

T.D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Solid-State Electronics · 2010 · 35 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +4

Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

T.-W. Pi, Haowei Lin, T. H. Chiang et al. · Applied Surface Science · 2013 · 20 citations

Materials Science, Surface Characterization, Ii-vi Semiconductor +7

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

W.C. Lee, B. H. Chin, L. K. Chu et al. · Journal of Crystal Growth · 2008 · 19 citations

Materials Science, Engineering, Applied Physics +2

MBE grown high-quality Gd2O3/Si(111) hetero-structure

T.D. Lin, Maoyao Hang, Chia‐Hung Hsu et al. · Journal of Crystal Growth · 2007 · 17 citations

Materials Engineering, Materials Science, Engineering +4