T. H. Chiang

1 nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

K. H. Shiu, T. H. Chiang, P. Chang et al. · Applied Physics Letters · 2008 · 50 citations

Engineering, Electrical Engineering, Materials Engineering +17

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

R. L. Chu, T. H. Chiang, W.J. Hsueh et al. · Applied Physics Letters · 2014 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via <i>in-situ</i> atomic layer deposition

Y. H. Chang, Chao‐An Lin, Y. T. Liu et al. · Applied Physics Letters · 2012 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

Chao‐An Lin, H. C. Chiu, T. H. Chiang et al. · Applied Physics Letters · 2011 · 24 citations

Engineering, Materials Science, Physics +17

Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition

T.-W. Pi, Haowei Lin, T. H. Chiang et al. · Applied Surface Science · 2013 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +15