R. L. Chu

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

R. L. Chu, T. H. Chiang, W.J. Hsueh et al. · Applied Physics Letters · 2014 · 35 citations

Materials Science, Semiconductors, Electrical Engineering +12

Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

L. K. Chu, T. D. Lin, Mao Lin Huang et al. · Applied Physics Letters · 2009 · 33 citations

Materials Science, Semiconductors, Oxide Heterostructures +13

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by <i>in-situ</i> atomic-layer-deposited HfO2

T. D. Lin, Wen-Hsin Chang, R. L. Chu et al. · Applied Physics Letters · 2013 · 29 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +10

Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

Li‐Kang Chu, R. L. Chu, T. D. Lin et al. · Solid-State Electronics · 2010 · 28 citations

Materials Science, Interfacial Layers, Semiconductor Technology +9

Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Chun-Min Fu, Y.H. Lin, W.C. Lee et al. · Microelectronic Engineering · 2015 · 16 citations

Electrical Engineering, Engineering, Electronic Engineering +5