P. Chang

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang et al. · Applied Physics Letters · 2005 · 331 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +14

Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface

Yu Huang, P. Chang, Zisheng Yang et al. · Applied Physics Letters · 2005 · 58 citations

Engineering, X-ray Reflectivity, Optoelectronic Devices +20

A Compact 0.1–14-GHz Ultra-Wideband Low-Noise Amplifier in 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex> </formula> CMOS

P. Chang, Shawn S. H. Hsu · IEEE Transactions on Microwave Theory and Techniques · 2010 · 51 citations

Low-power Electronics, Electrical Engineering, Engineering +12

1 nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

K. H. Shiu, T. H. Chiang, P. Chang et al. · Applied Physics Letters · 2008 · 50 citations

Materials Engineering, Oxide Heterostructures, Electrical Engineering +14

An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

P. Chang, Sy-Haur Su, Shawn S. H. Hsu et al. · IEEE Microwave and Wireless Components Letters · 2012 · 50 citations

Radio Frequency, High-frequency Device, Nm Cmos +6