K. H. Shiu

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

1 nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

K. H. Shiu, T. H. Chiang, P. Chang et al. · Applied Physics Letters · 2008 · 50 citations

Materials Engineering, Oxide Heterostructures, Electrical Engineering +14

Approaching fermi level unpinning in Oxide-In0.2Ga0.8As

T. H. Chiang, W.C. Lee, T.D. Lin et al. · 2008 · 15 citations

Materials Science, Electrical Characteristics, Electrical Engineering +14

Oxide scalability in Al2O3∕Ga2O3(Gd2O3)∕In0.20Ga0.80As∕GaAs heterostructures

K. H. Shiu, C. H. Chiang, Y. J. Lee et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 10 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +10