Kuei‐Shu Chang‐Liao

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

Ping-Hung Tsai, Kuei‐Shu Chang‐Liao, Chu-Yung Liu et al. · IEEE Electron Device Letters · 2008 · 45 citations

Engineering, Electrical Engineering, Materials Science +13

Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

Ping-Hung Tsai, Kuei‐Shu Chang‐Liao, Te-Chiang Liu et al. · IEEE Electron Device Letters · 2009 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <tex-math notation="TeX">${\rm HfGeO}_{\rm x}$ </tex-math></inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2014 · 40 citations

Engineering, Electrical Engineering, Materials Science +15

Twin Thin-Film Transistor Nonvolatile Memory With an Indium–Gallium–Zinc–Oxide Floating Gate

Min-Feng Hung, Yung‐Chun Wu, Jiun‐Jye Chang et al. · IEEE Electron Device Letters · 2012 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Electrical Characteristics of Ge pMOSFETs With ZrO₂/HfO₂Stack Gate Dielectric

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Wei-Fong Chi et al. · IEEE Electron Device Letters · 2015 · 34 citations

Engineering, Electrical Engineering, Materials Science +15