Chen-Chien Li

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <tex-math notation="TeX">${\rm HfGeO}_{\rm x}$ </tex-math></inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2014 · 39 citations

Engineering, Oxidation Resistance, Plasma Processing +16

Improved Electrical Characteristics of Ge pMOSFETs With ZrO₂/HfO₂Stack Gate Dielectric

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Wei-Fong Chi et al. · IEEE Electron Device Letters · 2015 · 34 citations

Device Modeling, Electrical Characteristics, Electrical Engineering +13

A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Chen-Chien Li et al. · Applied Physics Letters · 2012 · 27 citations

Materials Science, Ii-vi Semiconductor, Optical Materials +14

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Transactions on Electron Devices · 2014 · 27 citations

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +14

Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel

Yanlin Li, Kuei‐Shu Chang‐Liao, Chen-Chien Li et al. · IEEE Electron Device Letters · 2019 · 26 citations

Electrical Characteristics, Electrical Engineering, Engineering +12