Li-Jung Liu

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <tex-math notation="TeX">${\rm HfGeO}_{\rm x}$ </tex-math></inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2014 · 40 citations

Engineering, Electrical Engineering, Materials Science +15

Improved Electrical Characteristics of Ge pMOSFETs With ZrO₂/HfO₂Stack Gate Dielectric

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Wei-Fong Chi et al. · IEEE Electron Device Letters · 2015 · 34 citations

Engineering, Electrical Engineering, Materials Science +15

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Transactions on Electron Devices · 2014 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced Hole Mobility and Low $Tinv$ for pMOSFET by a Novel Epitaxial Si/Ge Superlattice Channel

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2012 · 18 citations

Engineering, Electrical Engineering, Materials Science +15