Chung-Hao Fu

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <tex-math notation="TeX">${\rm HfGeO}_{\rm x}$ </tex-math></inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Electron Device Letters · 2014 · 40 citations

Engineering, Electrical Engineering, Materials Science +15

Improved Electrical Characteristics of Ge pMOSFETs With ZrO₂/HfO₂Stack Gate Dielectric

Chen-Chien Li, Kuei‐Shu Chang‐Liao, Wei-Fong Chi et al. · IEEE Electron Device Letters · 2015 · 34 citations

Engineering, Electrical Engineering, Materials Science +15

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Li-Jung Liu et al. · IEEE Transactions on Electron Devices · 2014 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Chen-Chien Li et al. · Applied Physics Letters · 2012 · 27 citations

Engineering, Materials Engineering, Materials Science +17

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

Chung-Hao Fu, Kuei‐Shu Chang‐Liao, Yu‐Wei Chang et al. · Microelectronic Engineering · 2011 · 23 citations

Engineering, Electrical Engineering, Materials Science +16