Applied Physics Letters · 2012 · 27 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsOxide SemiconductorsPlasma-surface InteractionsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesBand GapCapacitance MeasurementCapacitance-voltage CharacterizationOptical Band GapOxygen Vacancies In Metal OxidesOxygen Vacancy FormationPlasma TreatmentX-ray Diffraction Analysis
A tetragonal HfO2 (t-HfO2) with higher-k value and large band gap is investigated in this work. X-ray diffraction analysis shows a t-HfO2 can be formed by using Cl2 plasma treatment at the HfO2/Si interface after a post deposition annealing at 650 °C. The mechanisms of t-HfO2 formation can be attributed to the Si diffusion and oxygen vacancy generation which are formed by Cl2 plasma treatment. From the cross-sectional transmission electron microscope and capacitance-voltage measurement, the k value of this t-HfO2 is estimated to be about 35. The optical band gap value for t-HfO2 is similar to that of the monoclinic.
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High-resolution depth profiling in ultrathin Al2O3 films on Si
E. P. Gusev, M. Copel, E. Cartier et al. · Applied Physics Letters · 2000 · 412 citations