Improved Electrical Characteristics of Bulk FinFETs With SiGe Super-Lattice-Like Buried Channel

Abstract

Although SiGe super-lattice (SL) buried channel was proposed to enhance carrier mobility in MOSFETs, its application on FinFETs is not reported yet. The electrical characteristics of nFinFETs with SiGe and SiGe SL-like buried channels were studied in this letter for the first time. The results show that the electron mobility of nFinFETs with SiGe buried channel is enhanced by an SL-like structure. A higher ON-state current and ON-state/ OFF-state current ratio are also achieved. However, the sub-threshold swing and reliability characteristics need improvement due to slight degradation of interface quality.