High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

High ε gate dielectrics Gd2O3 and Y2O3 for silicon

J. Kwo, M. Hong, A. R. Kortan et al. · Applied Physics Letters · 2000 · 270 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-voltage normally off GaN MOSFETs on sapphire substrates

Kevin Matocha, T. Paul Chow, R.J. Gutmann · IEEE Transactions on Electron Devices · 2004 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Yen‐Chung Chang, H. C. Chiu, Y. J. Lee et al. · Applied Physics Letters · 2007 · 120 citations

Engineering, Materials Engineering, Materials Science +17

Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium

J. Kwo, M. Hong, S. Nakahara · Applied Physics Letters · 1986 · 115 citations

Natural Sciences, Materials Science, Physics +13

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +11