Kakuya Iwata

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

Ken Nakahara, Tetsuhiro Tanabe, H. Takasu et al. · Japanese Journal of Applied Physics · 2001 · 88 citations

Materials Science, Electrical Engineering, Zno Growth +12

Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

Kakuya Iwata, Hajime Asahi Asami, R. Kuroiwa et al. · Japanese Journal of Applied Physics · 1997 · 75 citations

Materials Science, Surface Plane, Electrical Engineering +15

New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth

H. Asahi, Kazuhiko Yamamoto, Kakuya Iwata et al. · Japanese Journal of Applied Physics · 1996 · 68 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai et al. · Japanese Journal of Applied Physics · 2004 · 60 citations

Optical Materials, Engineering, Optoelectronic Devices +16