Mitsuhiko Sakai

Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes

Ken Nakahara, Kentaro Tamura, Mitsuhiko Sakai et al. · Japanese Journal of Applied Physics · 2004 · 60 citations

Optical Materials, Engineering, Optoelectronic Devices +16

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

Takeyoshi Masuda, Keiji Wãda, Toru Hiyoshi et al. · Materials science forum · 2014 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

Keiji Wãda, Kosuke Uchida, Ren Kimura et al. · Materials science forum · 2014 · 21 citations

Semiconductor Technology, Electrical Engineering, Kv Sic Mosfets +11

Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

Toru Hiyoshi, Kosuke Uchida, Mitsuhiko Sakai et al. · 2016 · 20 citations

Trench Bottom Oxide, Semiconductor Technology, Electrical Engineering +13

150 A SiC V-groove trench gate MOSFET with 6 × 6 mm² chip size on a 150 mm C-face in-house epitaxial wafer

Y. Saitoh, Hironori Itoh, Keiji Wãda et al. · Japanese Journal of Applied Physics · 2016 · 17 citations

Semiconductor Technology, Electrical Engineering, Engineering +9