Y. Saitoh

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 257 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

16.7-fA/cell tunnel-leakage-suppressed 16-Mb SRAM for handling cosmic-ray-induced multierrors

Kensuke Osada, Y. Saitoh, Eishi Ibe et al. · IEEE Journal of Solid-State Circuits · 2003 · 93 citations

Hardware Security, Electrical Engineering, Engineering +15

SRAM immunity to cosmic-ray-induced multierrors based on analysis of an induced parasitic bipolar effect

Kensuke Osada, Kizashi Yamaguchi, Y. Saitoh et al. · IEEE Journal of Solid-State Circuits · 2004 · 88 citations

Hardware Security, Error Checking, Electrical Engineering +14

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Masaya Okada, Y. Saitoh, Mitsunori Yokoyama et al. · Applied Physics Express · 2010 · 61 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10

16.7 fA/cell tunnel-leakage-suppressed 16 Mb SRAM for handling cosmic-ray-induced multi-errors

Kensuke Osada, Y. Saitoh, Eishi Ibe et al. · 2003 · 29 citations

Hardware Security, Low-power Electronics, Electrical Engineering +14