Masaya Okada

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 257 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode

Takuya Maeda, Masaya Okada, Masaki Ueno et al. · Applied Physics Express · 2017 · 70 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Masaya Okada, Y. Saitoh, Mitsunori Yokoyama et al. · Applied Physics Express · 2010 · 61 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10

Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

Masaki Ueno, Susumu Yoshimoto, K. Ishihara et al. · 2014 · 22 citations

Vertical Gan-sbds, Semiconductor Technology, Electrical Engineering +9

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

Takuya Maeda, Masaya Okada, Masaki Ueno et al. · Applied Physics Express · 2016 · 17 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13