Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Abstract

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density. High quality n-GaN drift-layer with an electron mobility of 930 cm2 V-1 s-1 was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements. The specific on-resistance (RonA) and the breakdown voltage (VB) of the SBDs were 0.71 mΩ cm2 and over 1100 V, respectively. The figure of merit (VB2/RonA) was 1.7 GW/cm2, which is the highest value among previously reported SBDs for both GaN and SiC.