Makoto Kiyama

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 257 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Discovery of colossal Seebeck effect in metallic Cu2Se

Dogyun Byeon, Róbert Sobota, Kévin Delime-Codrin et al. · Nature Communications · 2019 · 170 citations · Full text

High-breakdown-voltage pn-junction diodes on GaN substrates

Yusuke Yoshizumi, Shin Hashimoto, Tatsuya Tanabe et al. · Journal of Crystal Growth · 2007 · 89 citations

Electrical Engineering, Gan Substrates, Engineering +2

High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates

S. Hashimoto, Yusuke Yoshizumi, Takehiko Tanabe et al. · Journal of Crystal Growth · 2006 · 70 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +5

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Masaya Okada, Y. Saitoh, Mitsunori Yokoyama et al. · Applied Physics Express · 2010 · 61 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +10