Kazuhide Sumiyoshi

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 257 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono et al. · Applied Physics Express · 2012 · 118 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Masahiro Adachi, Yusuke Yoshizumi, Yohei Enya et al. · Applied Physics Express · 2010 · 87 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai et al. · Applied Physics Express · 2012 · 47 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

Masaki Ueno, Susumu Yoshimoto, K. Ishihara et al. · 2014 · 22 citations

Vertical Gan-sbds, Semiconductor Technology, Electrical Engineering +9