Concepedia

Author

Yohei Enya

Sumitomo Electric Industries (Japan)

Also Known As

Y Enya, Yohei ENYA, Yohei Enya

12

Publications

988

Citations

9

H-Index

21

Concepts

All Affiliations

Sumitomo Electric Industries (Japan)Kyoto UniversitySony Computer Science Laboratories
YE

About

Yohei Enya is an author at Sumitomo Electric Industries (Japan) specializing in engineering, optoelectronics, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

9

9

979

2

Applied Physics

9

9

979

3

Electrical Engineering

8

8

951

4

Physics

2

2

78

5

Bioimaging

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1

28

Yohei Enya

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9

Publications

979

Citations

9

H-Index

YearCitations

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Yohei Enya, Yusuke Yoshizumi, Takashi Kyono,

Applied Physics Express

2009

377

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya,

Applied Physics Express

2009

182

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono,

Applied Physics Express

2012

118

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Masahiro Adachi, Yusuke Yoshizumi, Yohei Enya,

Applied Physics Express

2010

87

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Takashi Kyono, Yusuke Yoshizumi, Yohei Enya,

Applied Physics Express

2010

68

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

Mitsuru Funato, Akio Kaneta, Yoichi Kawakami,

Applied Physics Express

2010

50

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai,

Applied Physics Express

2012

47

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

Akio Kaneta, Yoon-Seok Kim, Mitsuru Funato,

Applied Physics Express

2012

28

InGaN-based true green laser diodes on novel semi-polar GaN substrates

Masaki Ueno, Yusuke Yoshizumi, Yohei Enya,

Journal of Crystal Growth

2010

22

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