Yohei Enya

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Yohei Enya, Yusuke Yoshizumi, Takashi Kyono et al. · Applied Physics Express · 2009 · 377 citations

Photonics, Nm Green Lasing, Electrical Engineering +13

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya et al. · Applied Physics Express · 2009 · 182 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono et al. · Applied Physics Express · 2012 · 118 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Masahiro Adachi, Yusuke Yoshizumi, Yohei Enya et al. · Applied Physics Express · 2010 · 87 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Takashi Kyono, Yusuke Yoshizumi, Yohei Enya et al. · Applied Physics Express · 2010 · 68 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15