Applied Physics Express · 2009 · 182 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsContinuous OperationCurrent DensityEpitaxial MaterialsGallium Nitride (Gan) MaterialsGreen Laser DiodesHeterostructure DevicesSemiconductor Laser DiodesThreshold Voltage
Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.
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