Katsushi Akita - Concepedia

Author

Katsushi Akita

Sumitomo Electric Industries (Japan)

Also Known As

Katsushi AKITA, Katsushi Akita

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Sumitomo Electric Industries (Japan)RIKEN University of Fukui Meijo University Sumitomo Electric Industries (United States)

About

Katsushi Akita is an author at Sumitomo Electric Industries (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	995
2	Applied Physics	12	15	995
3	Electrical Engineering	12	15	995
4	Materials Science	6	6	110
5	Materials Engineering	1	1	25

Katsushi Akita

Publications

Citations

H-Index

Page 1

	Year	Citations
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates Yohei Enya, Yusuke Yoshizumi, Takashi Kyono, Applied Physics Express PhotonicsNm Green LasingElectrical EngineeringEngineeringSolid-state Lighting	2009	377
Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya, Applied Physics Express Wide-bandgap SemiconductorPhotonicsElectrical EngineeringGan SubstratesEngineering	2009	182
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune, Applied Physics Express Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringAlgan-channel Hemt	2010	128
Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringHigh Current DensityNanoelectronicsLight-emitting Diodes	2007	64
High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates Hideki Hirayama, Katsushi Akita, Takashi Kyono, Japanese Journal of Applied Physics EngineeringHigh-efficiency 352Luminescence PropertyLight-emitting DiodesPhotonics	2004	54
Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack Norimasa Yafune, Shin Hashimoto, Katsushi Akita, Japanese Journal of Applied Physics Al ContentsWide-bandgap SemiconductorElectrical EngineeringEngineeringLow-resistive Ohmic Contacts	2011	30
Study of two‐dimensional electron gas in AlGaN channel HEMTs with high crystalline quality Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	2010	26
Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates Takashi Kyono, Hideki Hirayama, Katsushi Akita, Journal of Applied Physics Aluminium NitrideEngineeringUltraviolet Emission EfficiencyOptical PropertiesNanoelectronics	2005	25
Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures Maiko Hatano, Norimasa Yafune, Hirokuni Tokuda, IEICE Transactions on Electronics Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringSuperior Dc	2012	24
High carrier concentration in high Al‐composition AlGaN‐channnel HEMTs Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceSemiconductorsElectrical EngineeringAluminium NitrideEngineering	2011	22

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