Katsushi Akita

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Yohei Enya, Yusuke Yoshizumi, Takashi Kyono et al. · Applied Physics Express · 2009 · 377 citations

Photonics, Nm Green Lasing, Electrical Engineering +13

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya et al. · Applied Physics Express · 2009 · 182 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune et al. · Applied Physics Express · 2010 · 128 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +9

Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates

Katsushi Akita, Takashi Kyono, Yusuke Yoshizumi et al. · Journal of Applied Physics · 2007 · 64 citations

Wide-bandgap Semiconductor, Engineering, High Current Density +17

High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates

Hideki Hirayama, Katsushi Akita, Takashi Kyono et al. · Japanese Journal of Applied Physics · 2004 · 54 citations

Engineering, High-efficiency 352, Luminescence Property +16