Norimasa Yafune

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune et al. · Applied Physics Express · 2010 · 128 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +9

AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation

Norimasa Yafune, S. Hashimoto, K. Akita et al. · Electronics Letters · 2014 · 100 citations · Full text

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

Norimasa Yafune, Shin Hashimoto, Katsushi Akita et al. · Japanese Journal of Applied Physics · 2011 · 30 citations

Al Contents, Wide-bandgap Semiconductor, Electrical Engineering +7

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

Maiko Hatano, Norimasa Yafune, Hirokuni Tokuda et al. · IEICE Transactions on Electronics · 2012 · 24 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

High carrier concentration in high Al‐composition AlGaN‐channnel HEMTs

Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 22 citations

Materials Science, Semiconductors, Electrical Engineering +10