Electronics Letters · 2014 · 102 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsSemiconductor Device MaterialsThin-film TransistorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum NitrideHigh-electron-mobility TransistorsHigh-temperature Device OperationOhmic ConductionOhmic ContactsOhmic MaterialsResistivityThreshold Voltage
An AlN/AlGaN high‐electron‐mobility transistor (HEMT) fabricated on a free‐standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of −3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high‐temperature operation.
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High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations