Masaaki Kuzuhara

10-W/mm AlGaN-GaN HFET with a field modulating plate

Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto et al. · IEEE Electron Device Letters · 2003 · 271 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune et al. · Applied Physics Express · 2010 · 128 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +9

Application of GaN-based heterojunction FETs for advanced wireless communication

Yasuo Ohno, Masaaki Kuzuhara · IEEE Transactions on Electron Devices · 2001 · 128 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Masaaki Kuzuhara, Joel T. Asubar, Hirokuni Tokuda · Japanese Journal of Applied Physics · 2016 · 128 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Masaaki Kuzuhara, Hirokuni Tokuda · IEEE Transactions on Electron Devices · 2014 · 119 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9