Masaaki Kuzuhara - Concepedia

Author

Masaaki Kuzuhara

NEC (Japan)ORCID

Also Known As

M Kuzuhara, M. Kuzuhara, Masaaki KUZUHARA, Masaaki Kuzuhara

308

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)University of Fukui Sumitomo Electric Industries (Japan)Toyoda Gosei (Japan)

About

Masaaki Kuzuhara is an author at NEC (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	74	2.9K
2	Electrical Engineering	29	67	2.7K
3	Applied Physics	28	62	2.5K
4	Materials Engineering	6	6	110
5	Computer Engineering	1	1	24

Masaaki Kuzuhara

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
10-W/mm AlGaN-GaN HFET with a field modulating plate Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringFp ElectrodeApplied Physics	2003	271
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate Hirokuni Tokuda, Maiko Hatano, Norimasa Yafune, Applied Physics Express Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringAlgan-channel Hemt	2010	128
Application of GaN-based heterojunction FETs for advanced wireless communication Yasuo Ohno, Masaaki Kuzuhara IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2001	128
AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation Masaaki Kuzuhara, Joel T. Asubar, Hirokuni Tokuda Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2016	128
Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications Masaaki Kuzuhara, Hirokuni Tokuda IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringPoint DefectsPower Switching Applications	2014	119
Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md. Tanvir Hasan, Takashi Asano, Hirokuni Tokuda, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2013	115
Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate Yasuhiro Okamoto, Yuji Ando, K. Hataya, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorField-modulating PlateElectrical EngineeringEngineeringRf Semiconductor	2004	112
AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation Norimasa Yafune, S. Hashimoto, K. Akita, Electronics Letters	2014	100
Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltage K. Asano, Yosuke Miyoshi, K. Ishikura, Field-modulating PlateElectrical EngineeringEngineeringFabricated FetsNanoelectronics	2002	66
Infrared rapid thermal annealing of Si-implanted GaAs Masaaki Kuzuhara, H. Kohzu, Yoichiro Takayama Applied Physics Letters SemiconductorsSi-implanted GaasElectrical EngineeringElectronic DevicesPost-implantation Capless Annealing	1982	64

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