Koji Katayama

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Yohei Enya, Yusuke Yoshizumi, Takashi Kyono et al. · Applied Physics Express · 2009 · 377 citations

Engineering, Electrical Engineering, Materials Science +17

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 334 citations

Natural Sciences, Materials Engineering, Materials Science +16

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 260 citations

Engineering, Electrical Engineering, Materials Science +17

A 4M Synapses integrated Analog ReRAM based 66.5 TOPS/W Neural-Network Processor with Cell Current Controlled Writing and Flexible Network Architecture

Reiji Mochida, Kazuyuki Kouno, Yuriko Hayata et al. · 2018 · 186 citations

Engineering, Computer Engineering, Analog Electronics +15

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya et al. · Applied Physics Express · 2009 · 182 citations

Engineering, Electrical Engineering, Materials Science +17