Zhiqiang Wei

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 334 citations

Natural Sciences, Materials Engineering, Materials Science +16

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Zhiqiang Wei, T. Takagi, Yuchi Kanzawa et al. · 2011 · 116 citations

Engineering, Electrical Engineering, Materials Science +15

Electroforming and resistance-switching mechanism in a magnetite thin film

A. Odagawa, Y. Katoh, Yuchi Kanzawa et al. · Applied Physics Letters · 2007 · 85 citations

Natural Sciences, Materials Engineering, Materials Science +16

True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

Zhiqiang Wei, Y. Katoh, Shin Ogasahara et al. · 2016 · 77 citations

Engineering, Computer Engineering, Electrical Engineering +14

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

Takeki Ninomiya, Shunsaku Muraoka, Zhiqiang Wei et al. · IEEE Electron Device Letters · 2013 · 49 citations

Engineering, Electrical Engineering, Materials Science +16