Zhiqiang Wei

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 331 citations

Non-volatile Memory, Engineering, Oxidation Resistance +23

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Zhiqiang Wei, T. Takagi, Yuchi Kanzawa et al. · 2011 · 115 citations

Engineering, Reliability Engineering, High-density Bipolar Reram +16

Electroforming and resistance-switching mechanism in a magnetite thin film

A. Odagawa, Y. Katoh, Yuchi Kanzawa et al. · Applied Physics Letters · 2007 · 85 citations

Magnetic Properties, Engineering, Magnetic Materials +17

True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

Zhiqiang Wei, Y. Katoh, Shin Ogasahara et al. · 2016 · 77 citations

Electrical Engineering, Engineering, Vlsi Design +11

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

Takeki Ninomiya, Shunsaku Muraoka, Zhiqiang Wei et al. · IEEE Electron Device Letters · 2013 · 49 citations

\Rm Tao, Electrical Engineering, Filament Expansion +13