Takeki Ninomiya

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 331 citations

Non-volatile Memory, Engineering, Oxidation Resistance +23

Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current

Takeki Ninomiya, Zhigiang Wei, Shusaku Muraoka et al. · IEEE Transactions on Electron Devices · 2013 · 120 citations

\Rm Tao, Electrical Engineering, Oxygen Vacancy +12

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Zhiqiang Wei, T. Takagi, Yuchi Kanzawa et al. · 2011 · 115 citations

Engineering, Reliability Engineering, High-density Bipolar Reram +16

Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in ${\rm TaO}_{x}$ Bipolar-ReRAM

Takeki Ninomiya, Shunsaku Muraoka, Zhiqiang Wei et al. · IEEE Electron Device Letters · 2013 · 49 citations

\Rm Tao, Electrical Engineering, Filament Expansion +13

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Akifumi Kawahara, K. Kawai, Y. Ikeda et al. · 2013 · 42 citations

Materials Engineering, Hardware Security, Electrical Engineering +15