K. Kawai

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei, Yuchi Kanzawa, K. Arita et al. · 2008 · 331 citations

Non-volatile Memory, Engineering, Oxidation Resistance +23

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Zhiqiang Wei, T. Takagi, Yuchi Kanzawa et al. · 2011 · 115 citations

Engineering, Reliability Engineering, High-density Bipolar Reram +16

Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application

Y. Hayakawa, A. Himeno, Ryo Yasuhara et al. · 2015 · 85 citations

High Thermal Stability, Cell Structure, Engineering +20

True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

Zhiqiang Wei, Y. Katoh, Shin Ogasahara et al. · 2016 · 77 citations

Electrical Engineering, Engineering, Vlsi Design +11

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Akifumi Kawahara, K. Kawai, Y. Ikeda et al. · 2013 · 42 citations

Materials Engineering, Hardware Security, Electrical Engineering +15