Katsunori Yanashima

Characterization of threading dislocations in GaN epitaxial layers

T. Hino, Shigetaka Tomiya, T. Miyajima et al. · Applied Physics Letters · 2000 · 398 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +13

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono et al. · Applied Physics Express · 2012 · 118 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai et al. · Applied Physics Express · 2012 · 47 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

GaN-based blue laser diodes

Takao Miyajima, T. Tojyo, T. Asano et al. · Journal of Physics Condensed Matter · 2001 · 44 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror

Tatsushi Hamaguchi, Hiroshi Nakajima, M. Tanaka et al. · Applied Physics Express · 2019 · 41 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14