Katsunori Yanashima - Concepedia

Author

Katsunori Yanashima

Tokyo Institute of Technology

Also Known As

K. Yanashima, Katsunori Yanashima

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology Sony Computer Science Laboratories Sony (Taiwan)Fujitsu (Japan)Sumitomo Electric Industries (Japan)

About

Katsunori Yanashima is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	20	1K
2	Applied Physics	15	18	955
3	Electrical Engineering	10	10	345
4	Chemical Engineering	1	1	19
5	Chemistry	1	1	19

Katsunori Yanashima

Publications

Citations

H-Index

Page 1

	Year	Citations
Characterization of threading dislocations in GaN epitaxial layers T. Hino, Shigetaka Tomiya, T. Miyajima, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringDislocation Interaction	2000	398
High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm Shimpei Takagi, Yohei Enya, Takashi Kyono, Applied Physics Express Wide-bandgap SemiconductorEngineeringLaser ApplicationsLaser MaterialGreen Laser Diodes	2012	118
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai, Applied Physics Express Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsLaser Material	2012	47
GaN-based blue laser diodes Takao Miyajima, T. Tojyo, T. Asano, Journal of Physics Condensed Matter Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2001	44
Sub-milliampere-threshold continuous wave operation of GaN-based vertical-cavity surface-emitting laser with lateral optical confinement by curved mirror Tatsushi Hamaguchi, Hiroshi Nakajima, M. Tanaka, Applied Physics Express Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringLateral Optical Confinement	2019	41
Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN Tatsushi Hamaguchi, Yukio Hoshina, Kentaro Hayashi, Applied Physics Express PhotonicsEngineeringLaser ScienceRoom-temperature Continuous-wave OperationApplied Physics	2020	41
Threading Dislocations and Optical Properties of GaN and GaInN T. Miyajima, T. Hino, Shigetaka Tomiya, physica status solidi (b)	2001	38
Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates Kenji Funato, Shigeki Hashimoto, Katsunori Yanashima, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorOptical MaterialsEngineeringSapphire Substrates	1999	38
Single transverse mode operation of GaN-based vertical-cavity surface-emitting laser with monolithically incorporated curved mirror Hiroshi Nakajima, Tatsushi Hamaguchi, M. Tanaka, Applied Physics Express PhotonicsEngineeringAluminum Gallium NitrideTransverse ModeGan Power Device	2019	35
Blue-green laser diode grown by photo-assisted MOCVD A. Toda, Fumihiko Nakamura, Katsunori Yanashima, Journal of Crystal Growth PhotonicsBlue-green Laser DiodeEngineeringApplied PhysicsLaser Material	1997	29

Page 1