Tatsushi Hamaguchi

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono et al. · Applied Physics Express · 2012 · 118 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth

Shouichiro Izumi, Noriyuki Fuutagawa, Tatsushi Hamaguchi et al. · Applied Physics Express · 2015 · 90 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +12

Milliwatt‐class GaN‐based blue vertical‐cavity surface‐emitting lasers fabricated by epitaxial lateral overgrowth

Tatsushi Hamaguchi, Noriyuki Fuutagawa, Shouichiro Izumi et al. · physica status solidi (a) · 2016 · 75 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Lateral optical confinement of GaN-based VCSEL using an atomically smooth monolithic curved mirror

Tatsushi Hamaguchi, M. Tanaka, Jugo Mitomo et al. · Scientific Reports · 2018 · 66 citations · Full text

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai et al. · Applied Physics Express · 2012 · 47 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17