Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth

Abstract

We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibited a threshold current of 8 mA and a threshold voltage of 4.5 V at a lasing wavelength of 446 nm. The maximum output power was 0.9 mW for an 8-µm-diameter current aperture, which was made possible because of the high thermal conductivity of the GaN substrate.