Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

Abstract

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on free-standing GaN substrates with low dislocation density. Vertical GaN-SBDs with a forward current of 5A and a blocking voltage of 600V exhibit the most superior reverse recovery characteristics among GaN, SiC, and Si diodes. We also confirmed stable forward and reverse aging characteristics for 1000 hours at 150 °C.