Hiromu Shiomi

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 257 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film

Hiromu Shiomi, H. Nakahata, Takahiro Imai et al. · Japanese Journal of Applied Physics · 1989 · 133 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13

Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films

Hiromu Shiomi, Yoshiki Nishibayashi, Naoji Fujimori · Japanese Journal of Applied Physics · 1989 · 122 citations

Electrical Engineering, Diamond Film, Engineering +10

Reactive Ion Etching of Diamond in O₂ and CF₄ Plasma, and Fabrication of Porous Diamond for Field Emitter Cathodes

Hiromu Shiomi · Japanese Journal of Applied Physics · 1997 · 117 citations

Materials Science, Diamond-like Carbon, Chemical Engineering +14

Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method

Hiromu Shiomi, Keiichirou Tanabe, Yoshiki Nishibayashi et al. · Japanese Journal of Applied Physics · 1990 · 109 citations

Materials Science, Materials Engineering, Diamond-like Carbon +15