R. Kuroiwa

Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

Kakuya Iwata, Hajime Asahi Asami, R. Kuroiwa et al. · Japanese Journal of Applied Physics · 1997 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Optical properties of GaN layers grown on <i>C</i>-, <i>A</i>-, <i>R</i>-, and <i>M</i>-plane sapphire substrates by gas source molecular beam epitaxy

S. Tripathy, R. K. Soni, H. Asahi et al. · Journal of Applied Physics · 1999 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +17

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Kakuya Iwata, H. Asahi, Kumiko Asami et al. · Japanese Journal of Applied Physics · 1998 · 56 citations

Engineering, Materials Engineering, Materials Science +16

Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy

R. Kuroiwa, H. Asahi, K. Asami et al. · Applied Physics Letters · 1998 · 51 citations

Engineering, Materials Science, Physics +17

Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

H. Asahi, K. Iwata, Hitoshi Tampo et al. · Journal of Crystal Growth · 1999 · 33 citations

Engineering, Materials Engineering, Materials Science +15