High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu, +4

Japanese Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +8

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Kakuya Iwata, H. Asahi, Kumiko Asami, +2

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsExcitonic PhotoluminescenceGan-rich Side +11

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

H. Asahi, Kumiko Asami, Tetsuya Watanabe, +4

Applied Physics Letters

Materials ScienceSemiconductorsAluminium NitrideEngineeringPhysics +12

Gas Source Molecular Beam Epitaxial Growth of GaN_1-xP_x (x \Leq 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

Kakuya Iwata, H. Asahi, Kumiko Asami, +1

Japanese Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorEngineeringGan-rich SidePhysics +6

Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)_n(InP)_n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

Seong Jin Kim, H. Asahi, M. Takemoto, +3

Japanese Journal of Applied Physics

Quasi-perfect Cupt-type OrderingEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +15

Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation

Hitoshi Sumida, H. Asahi, Soon Jae Yu, +3

Applied Physics Letters

Quantum ScienceElectrical EngineeringPhotonicsEngineeringPhotoluminescence +11

Electroreflectance study of AlxGa1−x−yInyP alloy

Kumiko Asami, H. Asahi, Shun‐ichi Gonda, +2

Solid State Communications

Materials EngineeringMaterials ScienceEngineeringElectroreflectance StudyApplied Physics +2

Electro- and Photoreflectance of Ultrathin Ge/Si Superlattices Grown by Phase-Locked Epitaxy

Kumiko Asami, Kazushi Miki, Kunihiro Sakamoto, +2

Japanese Journal of Applied Physics

Materials ScienceOptical MaterialsEngineeringCrystalline DefectsSilicon On Insulator +10

Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices

Masumichi Seta, H. Asahi, Song Gang Kim, +2

Journal of Applied Physics

Materials SciencePhotoluminescenceEngineeringPhysicsOptical Properties +10

Photoluminescence Wavelength Dependence on Layer Structure of GaP/AlP Modulated Superlattices

Joon Hong Kim, H. Asahi, Kenji Doi, +2

Japanese Journal of Applied Physics

Materials SciencePhotonicsIi-vi SemiconductorPl Peak WavelengthEngineering +11