Concepedia

H. Asahi

HA

Statistics

Publications

150

Citations

4.4K

H-Index

36

Active since

1974

Affiliations

The University of Osaka(Current)

Osaka Research Institute of Industrial Science and Technology

NTT Basic Research Laboratories

H. Asahi is an author at The University of Osaka specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1974–2018

150

Publications

150

High temperature (>400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Masahiko Hashimoto, Yikai Zhou, Masahito Kanamura et al. · Solid State Communications · 2002 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +14

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

N. Teraguchi, Akira Suzuki, Yasushi Nanishi et al. · Solid State Communications · 2002 · 170 citations

Natural Sciences, Materials Science, Physics +13

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +11

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Hidenao Tanaka, Yuichi Kawamura, Shunji Nojima et al. · Journal of Applied Physics · 1987 · 90 citations

Engineering, Electrical Engineering, Materials Science +17

Optical properties of GaN layers grown on <i>C</i>-, <i>A</i>-, <i>R</i>-, and <i>M</i>-plane sapphire substrates by gas source molecular beam epitaxy

S. Tripathy, R. K. Soni, H. Asahi et al. · Journal of Applied Physics · 1999 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +17

1–5 of 150