H. Asahi

High temperature (>400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Masahiko Hashimoto, Yikai Zhou, Masahito Kanamura et al. · Solid State Communications · 2002 · 204 citations

Materials Science, Magnetism, Engineering +7

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

N. Teraguchi, Akira Suzuki, Yasushi Nanishi et al. · Solid State Communications · 2002 · 170 citations

Magnetism, Ferromagnetism, Engineering +9

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Hidenao Tanaka, Yuichi Kawamura, Shunji Nojima et al. · Journal of Applied Physics · 1987 · 90 citations

Optical Materials, Engineering, Laser Applications +16

Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures

H. Asahi, Yuichi Kawamura, Haruo Nagai · Journal of Applied Physics · 1983 · 74 citations

Dh Wafers, Engineering, Laser Applications +17