Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Abstract

Short period GaP/AlP superlattices are grown on GaP and GaAs substrates at 600 °C by gas source molecular beam epitaxy with growth interruption. Alternating monolayer growth of GaP and AlP is confirmed by the observation of the reflection high-energy electron diffraction intensity oscillations during growth. The formation of short period superlattice structures and the zone-folded LO phonons are observed in the x-ray diffraction rocking curves and Raman spectra, respectively.