Shun‐ichi Gonda

Preparation and structure of carbon film deposited by a mass-separated C+ ion beam

Takeo Miyazawa, S. Misawa, Sadafumi Yoshida et al. · Journal of Applied Physics · 1984 · 159 citations

Materials Science, Diamond-like Carbon, Chemical Engineering +14

Infrared study of amorphous B1−<i>x</i>C<i>x</i> films

Koun Shirai, Shūichi Emura, Shun‐ichi Gonda et al. · Journal of Applied Physics · 1995 · 101 citations

Engineering, Thin Film Process Technology, Spectroscopic Property +17

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

Kakuya Iwata, H. Asahi, Kumiko Asami et al. · Japanese Journal of Applied Physics · 1998 · 56 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +13

Doping and electrical properties of Mg in LPE Al<i>x</i>Ga1−<i>x</i>As

Seiji Mukai, Yunosuke Makita, Shun‐ichi Gonda · Journal of Applied Physics · 1979 · 44 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Raman spectra of Al<i>x</i>In1−<i>x</i>As grown by molecular-beam epitaxy

Shūichi Emura, Tsuyoshi Nakagawa, Shun‐ichi Gonda et al. · Journal of Applied Physics · 1987 · 43 citations

Raman Spectra, Aluminium Nitride, Engineering +16