Shun‐ichi Gonda - Concepedia

Author

Shun‐ichi Gonda

The University of Osaka

Also Known As

Shun'ichi Gonda, Shun-Ichi Gonda, Shun-ichi GONDA, Shun-ichi Gonda, Shun‐ichi Gonda

122

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

The University of Osaka Osaka Research Institute of Industrial Science and Technology Electrotechnical Institute

About

Shun‐ichi Gonda is an author at The University of Osaka specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	47	1.3K
2	Applied Physics	22	44	1.3K
3	Natural Sciences	8	8	268
4	Education	2	2	43
5	Chemical Engineering	2	2	180

Shun‐ichi Gonda

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Preparation and structure of carbon film deposited by a mass-separated C+ ion beam Takeo Miyazawa, S. Misawa, Sadafumi Yoshida, Journal of Applied Physics Materials ScienceDiamond-like CarbonChemical EngineeringOptical MaterialsEngineering	1984	159
Infrared study of amorphous B1−<i>x</i>C<i>x</i> films Koun Shirai, Shūichi Emura, Shun‐ichi Gonda, Journal of Applied Physics EngineeringThin Film Process TechnologySpectroscopic PropertyAmorphous Boron CarbideBoron Nitride	1995	101
GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy Kakuya Iwata, H. Asahi, Kumiko Asami, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsExcitonic PhotoluminescenceGan-rich Side	1998	56
Doping and electrical properties of Mg in LPE Al<i>x</i>Ga1−<i>x</i>As Seiji Mukai, Yunosuke Makita, Shun‐ichi Gonda Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	1979	44
Raman spectra of Al<i>x</i>In1−<i>x</i>As grown by molecular-beam epitaxy Shūichi Emura, Tsuyoshi Nakagawa, Shun‐ichi Gonda, Journal of Applied Physics Raman SpectraAluminium NitrideEngineeringAcoustic MetamaterialTernary Alloy Alxin1−xas	1987	43
Radiation hardness of single‐crystalline zinc oxide films Kazuto Koike, Takahiro Aoki, Ryugo Fujimoto, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials EngineeringMaterials ScienceSemiconductorsWide-bandgap SemiconductorEngineering	2012	42
Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices H. Asahi, Kumiko Asami, Tetsuya Watanabe, Applied Physics Letters Materials ScienceSemiconductorsAluminium NitrideEngineeringPhysics	1991	41
Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering Soon Jae Yu, H. Asahi, Shūichi Emura, Journal of Applied Physics Optical MaterialsEngineeringIon ImplantationOptical PropertiesMolecular Beam Epitaxy	1989	40
Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method Koun Shirai, Shun‐ichi Gonda Journal of Applied Physics Materials ScienceSemiconductorsBoron NitrideOptical Absorption EdgeElectronic Materials	1990	38
Molecular Beam Epitaxy of GaP and GaAs<sub>1-<i>x</i></sub>P<sub><i>x</i></sub> Yuichi Matsushima, Shun‐ichi Gonda Japanese Journal of Applied Physics SemiconductorsMaterials ScienceIi-vi SemiconductorOptical MaterialsEngineering	1976	37

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