Very strong photoluminescence emission from GaN grown on amorphous silica substrate by gas source MBE

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 470 citations

Engineering, Electrical Engineering, Materials Science +17

High <i>p</i>-type conductivity in cubic GaN/GaAs(113)<i>A</i> by using Be as the acceptor and O as the codopant

O. Brandt, Hui Yang, H. Kostial et al. · Applied Physics Letters · 1996 · 138 citations

Engineering, Materials Science, Physics +15

Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method

Tetsuya Yamamoto, Hiroshi Katayama‐Yoshida · Japanese Journal of Applied Physics · 1997 · 108 citations

Engineering, Materials Engineering, Materials Science +16

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +11

Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

Kakuya Iwata, Hajime Asahi Asami, R. Kuroiwa et al. · Japanese Journal of Applied Physics · 1997 · 75 citations

Engineering, Materials Engineering, Materials Science +17