K. Asami

Optical properties of GaN layers grown on <i>C</i>-, <i>A</i>-, <i>R</i>-, and <i>M</i>-plane sapphire substrates by gas source molecular beam epitaxy

S. Tripathy, R. K. Soni, H. Asahi et al. · Journal of Applied Physics · 1999 · 73 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +12

Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates

K. Yamada, H. Asahi, Hitoshi Tampo et al. · Applied Physics Letters · 2001 · 52 citations

Materials Science, Semiconductors, Strong Photoluminescence Emission +15

Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy

R. Kuroiwa, H. Asahi, K. Asami et al. · Applied Physics Letters · 1998 · 51 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Gas source MBE growth of GaN rich side of GaN1 − P using ion-removed ECR radical cell

K. Iwata, H. Asahi, K. Asami et al. · Journal of Crystal Growth · 1997 · 41 citations

Wide-bandgap Semiconductor, Chemical Engineering, Gan Rich Side +2

Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony

H. Asahi, X.F. Liu, K. Inoue et al. · Journal of Crystal Growth · 1994 · 35 citations

Materials Science, Engineering, Electron-beam Lithography +6