M. Hong

Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang et al. · Applied Physics Letters · 2005 · 331 citations

Engineering, Materials Engineering, Materials Science +17

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Y. C. Chang, M. L. Huang, Yu‐Han Chang et al. · Microelectronic Engineering · 2011 · 98 citations

Engineering, Materials Engineering, Materials Science +16

Analysis of fouling potential in the electrodialysis process in the presence of an anionic surfactant foulant

H LEE, M. Hong, Suqin Han et al. · Journal of Membrane Science · 2008 · 69 citations

Engineering, Chemical Engineering, Chemistry +14

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface

Yu Huang, P. Chang, Zisheng Yang et al. · Applied Physics Letters · 2005 · 58 citations

Engineering, Materials Engineering, Materials Science +17