S. Nakahara

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye, G. D. Wilk, Bingzheng Yang et al. · Applied Physics Letters · 2003 · 305 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

STM study of the surface morphology of gold on mica

Christopher E. D. Chidsey, D. Loiacono, Tycho Sleator et al. · Surface Science · 1988 · 211 citations

Materials Science, Surface Characterization, Engineering +4

Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium

J. Kwo, M. Hong, S. Nakahara · Applied Physics Letters · 1986 · 115 citations

Rare Earth Mineral, Engineering, Crystal Growth Technology +16

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

Yanqing Wu, W. K. Wang, O. Koybasi et al. · IEEE Electron Device Letters · 2009 · 93 citations · Full text

Deep-submicrometer Inversion-mode, Engineering, Physics +8

Growth mechanism and clustering phenomena: The Ge-on-Si system

M. Zinke-Allmang, L. C. Feldman, S. Nakahara et al. · Physical review. B, Condensed matter · 1989 · 74 citations

Materials Engineering, Materials Science, Cluster Science +14